A fully nonlocal, fully implicit electromigration model along with an implicit finite element scheme are developed for the prediction of the evolution of the current density due to electromigration in any suitable simulation package. These numerical solutions for electromigration in ultrafast CMOS process nodes satisfy the two fundamental equations of electromigration: the transport equation and the drift-diffusion equation. A novel algorithm is developed to account for velocity, position and direction of the migration-induced current flows. Large-scale numerical simulations of electromigration effects in an area switching MOSFET are performed. The converged results with extreme numerical accuracy are benchmarked against the analytical solution, the fully-implicit FEM solution [@Kunik2004] and the pseudo-spectral FEM solution [@IzqAzpizar2007] for the mean-field model. The comparison of the numerical solution with the analytical solution highlights the importance of including the effect of the correlation of the current in the drift-diffusion equation. Finally, the converged electromigration solution is validated for switching MOSFETs in the 65 nm CMOS node.
According to the dynamics of amorphous semiconductors, two morphologies of dislocation structures are identified experimentally by transmission electron microscopy at a range of temperatures from 200 to 500 degrees Kelvin. It is confirmed that the role of the amorphous semiconductor in the dislocation dynamics can be observed at the length scale of 10 nm in the pull-out, which is three orders of magnitude higher than the typical length (10 nm) of the interface between the dislocation core and the disordered matrix (D) in the temperature range of 200-400 degrees Kelvin. More detailed analysis of the dislocation structure investigation by transmission electron microscopy in different temperatures indicates that the dislocation structures are formed from the interaction of climbing dislocations (C) and Shockley partial dislocations (S). Wiȩcimak-Langer discoveries of the dislocation structure in amorphous semiconductor are investigated by the low-temperature replica technique. The role of temperature in determining the amorphous structural morphology is discussed. d2c66b5586